Abstract
In this article we introduce a mathematical algorithm for the optimization of the doping distribution in power semiconductor devices in order to increase the breakdown voltage and decrease the on-state resistance of these devices. The algorithm is based on the computation of the doping sensitivity functions of the breakdown voltage and on-state resistance and uses a gradient-based iterative method to compute the optimum doping profile in metal-oxide-semiconductor field-effect transistors (MOSFET), insulted gate bipolar transistors (IGBT), p-n junctions, etc. Since the optimization is performed using gradient descents the method is well-suited for the optimization of doping concentration at all the nodes of the finite element discretization simultaneously (in which the number of nodes can be as large as 104-106). Due to the large simulation time of each individual device, traditional heuristic optimization methods such as genetic algorithms, swarm-optimization, or evolutionary algorithms are practically impossible to use when the number of optimization variables is larger than 10. Numerical results for the doping sensitivity functions of the breakdown voltage and on-state voltage are presented and discussed for a standard IGBT device.
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