Abstract
The bonding process of InP/InGaAsP dies to processed SOI using DVS-bis-BenzoCycloButene was developed. Surface preparation and the degree of planarization of bonding layers thinner than 300nm were optimized. Bonding strength and bonding quality was assessed, which shows to be sufficient for post-bonding processing. The heterogeneous integration of active photonic devices fabricated in this bonding layer on top of the SOI photonic layer is described.
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