Abstract
In this work, the effect of γ-irradiation on the adhesion properties of FP9120 diazoquinone–novolac photoresist films deposited on single-crystal silicon wafers by centrifugation was studied using an indentation method. It was found that γ-irradiation led to a decrease in the specific peeling energy G of photoresist films on silicon. In this case, the IR spectra of the photoresist exhibited a decrease in the intensity of vibration bands due to the Si–O–C moiety, which is responsible for adhesion to silicon, in the course of γ-irradiation. The observed experimental results were explained taking into account the radiation-chemical and relaxation processes occurring both at the photoresist/silicon interface and in the bulk of the polymer film.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
