Abstract
A series of cubic 3C–SiC/Si samples with different thicknesses grown by chemical vapor deposition (CVD) was studied by Raman spectroscopy using laser excitation with different wavelengths plus spectral line shape analysis via two theoretical methods. Through comparative UV and visible excitation Raman measurements and theoretical analysis, the TO intensity was mainly affected by laser penetration depth and crystalline quality. The difference spectra were utilized to remove the second-order Raman signal from Si substrate. Using theoretical Raman simulation on LO-phonon and plasmon-coupling (LOPC) mode, the top layer near to the surface has big difference in electrical and optical properties compared to the deeper layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
