Abstract

Here we present the actively modulated transportation of electromagnetic wave through hybrid metasurfaces containing graphene. The hybrid metasurfaces are composed of patterned metallic layers of extraordinary transmission and backed with graphene-sandwich layers. With the designed metallic layer with perforated structure, we demonstrated effective modulation on the on-resonance transmission amplitude by increasing the bias voltage from 0 to 4 V to electrically tune the Fermi level as well as the sheet resistance of the graphene-sandwich structure. We also found that the modulation depth can be further improved by properly designing the perforated metallic structure. By change the geometry from cut-wire structure to the “butterfly”-like pattern we preliminarily achieved 19.2% improvement on the on-resonance transmission modulation. The measured transmittances of the active metasurfaces show good agreement with the numerical simulations with fitted graphene sheet resistances. The hybrid metasurfaces presented in this work may be deployed in a wide range of applications based on active electromagnetic or optical modulations.

Highlights

  • Metamaterials are artificially engineered subwavelength micro/nano-structures with novel optical properties hard to be found in natural materials [1–5]

  • The graphene-sandwich layers are adhered to a 125 mm-thick Polyethylene terephthalate (PET) substrate

  • We have demonstrated that hybrid metasurfaces composed of perforated metallic layers on the top of a graphene-sandwich structure for active modulation on the on-resonance transmission amplitude

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Summary

Introduction

Metamaterials are artificially engineered subwavelength micro/nano-structures with novel optical properties hard to be found in natural materials [1–5]. The hybrid metasurfaces are composed of perforated metallic layers studied for extraordinary transmission [47–50] and backed with graphene-electrolyte-graphene sandwich structures. Effective modulation on the onresonance transmission amplitude was demonstrated by increasing the bias voltage from 0 to 4 V to electrically tune the Fermi level as well as the sheet resistance of the

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