Abstract
ABSTRACTA facile and cost-effective fabrication approach of active strain sensor based on individual ZnO micro/nanowire was demonstrated. By connecting a ZnO micro/nanowire along polar growth direction with two Ag electrodes on flexible polystyrene (PS) substrate, the fabricated strain sensor was obtained as a typical M-S-M structure. The I-V characteristic of the device was highly sensitive to the strain caused by the obvious change of Schottky barrier height (SBH). Furthermore, both of the symmetric and asymmetric changes of the SBH at the source and drain were observed during device testing process. The respective contribution of piezoresistance effect and the piezoelectric effect to the change of SBHs were also systematically investigated.
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