Abstract
High performance single nanometer lithography is an enabling technology for beyond CMOS devices. In this terms a novel mask- and development-less patterning scheme by using Field Emission Scanning Probe Lithography (FE-SPL) in order to realize single electron and quantum devices. This work aims to manufacture nanostructures into resists by using FE-SPL, whereas plasma etching at cryogenic temperatures is applied for an efficient pattern transfer into the bottom Si substrate. In this work the optimized lithography with diamond tips in 10nm 4- methyl- 1- acetoxycalix(6,8)arene. In order to transfer the generated nano-scale patterns into the Si sample, the silicon-to-resist selectivity of calixarene, for the anisotropic cryogenic dry etching process was investigated. A silicon-to-resist selectivity of about 4:1 for the resists was found.
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