Activation of ion implanted Si in GaN using a dual AlN annealing cap

Abstract

A dual annealing cap composed of a thin, low temperature metal-organic chemical vapor deposition (MOCVD) deposited AlN adhesion layer and a thicker, sputtered AlN film for added mechanical strength enabled us to anneal Si-implanted layers for 30 min at temperatures up to 1250 °C. At higher temperatures the cap was destroyed by the large partial pressure of the N2 from the GaN, which exceeds the yield strength of AlN. Electrical activations as high as 70% and electron mobilities comparable to those of in situ doped films were achieved. Compared to other methods, the surfaces are better protected using this cap because it adheres better than sputtered AlN, SiO2, or Si3N4; does not crack like MOCVD grown AlN films deposited at normal temperatures (∼1100 °C); and is stronger than thin MOCVD grown AlN films deposited at low temperatures (∼600 °C). Even though N does not escape, and in so doing, forms thermal etch pits, the surface of the annealed GaN is roughened by solid state diffusion with the surface roughness increasing with the annealing temperature.