Abstract
Extreme ultraviolet (EUV) lithography is expected to be used for 3 nm technology nodes and beyond, yet the need for actinic mask metrology and inspection remains a critical challenge. In this study, we demonstrate an EUV ptychography microscope as a high-harmonic generation-based actinic mask imaging tool. A series of diffraction patterns on an EUV mask is used to reconstruct both the amplitude and phase information of the periodic patterns using ptychographic algorithms. The results show that the EUV ptychography microscope has the potential for determining the actinic metrology of EUV masks and providing phase information for EUV mask development.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
