Abstract
The effect of ultrasonic treatment at various powers on the density N SS of surface states and their energy spectrum in p-type silicon single crystals has been studied. It is established that, depending on the regime of ultrasonic treatment, N SS can either increase or decrease compared to that in the initial single crystals. This is accompanied by a redistribution of the total charge of the surface states over the silicon bandgap width. This phenomenon is related to the fact that an acoustic wave, being an energy carrier, modifies a defect subsystem of the crystal by redistributing the impurity atoms and by generating new defects.
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