Acoustostimulated activation of bound defects in CdHgTe alloys

Abstract

This paper describes the results of acoustodynamic studies of the electrical parameters (effective electron concentration n=1/eR H and Hall mobility μ H /ρ) of n-CdxHg1− x crystals (x≈0.22). It is shown that ultrasonic loading (with intensities up to 0.5×104 W/m2) leads to an increase in the values of n and μ H in the impurity-conductivity temperature range (T≈100K). The authors explain the effects observed by invoking acoustostimulated liberation (activation) of donor-like bound defects, leading to a corresponding decrease in the scattering potential of alloy nonuniformities. Characteristic parameters of the acoustoelectric interaction are evaluated in the framework of an assumed dislocation model.