Abstract
The effect of ultrasonic deformation on the polarization properties of semiconductor quantum-well laser radiation is experimentally and theoretically studied at room temperature. It is shown that the observed rotation of the polarization plane is caused by mixing of the light- and heavy-hole levels in the quantum well. Data on the splitting energy of these levels are obtained. The unique capability of the ultrasonic technique for obtaining data on the value and distribution of technological strains in the heterostructure is shown.
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