Abstract
We study numerically the phonon dispersion relations and corresponding displacement fields for a circular cross-section nanowire superlattices consisting of anisotropic GaN and AlN. We determine a set of parameters which gives complete phononic bandgaps. The results suggest the potential for manipulating phonons in the micro/nano electromechanical systems.
Highlights
Phononic crystals (PCs) are composite materials made of arrays of constituents embedded in host materials [1,2,3]
The nanowire superlattices (NWSLs) are expected to yield interesting physical effects on phonons, which influence the electronic states and the transport properties via the electron-phonon interaction. These NWSLs can be regarded as wire-type phononic crystals (WPCs), in which the phononic bandgaps are induced by the periodicity along the wire axis
The size of the mini-Brillouin zone and corresponding phononic bandgaps are determined by the periodicity D of the NWSL
Summary
Phononic crystals (PCs) are composite materials made of arrays of constituents embedded in host materials [1,2,3]. Recent advances in fabrication methods enable realization of one-dimensional hetero-structures, i.e., nanowire superlattices (NWSLs) [5,6,7,8,9,10] Their electronic and optical properties were studied, and a variety of possible applications utilizing the characteristics were proposed [11,12,13,14]. The NWSLs are expected to yield interesting physical effects on phonons, which influence the electronic states and the transport properties via the electron-phonon interaction. These NWSLs can be regarded as wire-type phononic crystals (WPCs), in which the phononic bandgaps are induced by the periodicity along the wire axis
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