Achieving enhanced power factor using dual substitution at Cu and S sites in tetrahedrites thermoelectric materials Cu12Sb4S13

Abstract

Thermoelectric (TE) materials-based devices are valuable for translating heat into electricity, but the cost is largely driven by the use of purified metals required for efficient TE performance. This study focuses on tetrahedrite materials, which are cost-effective due to their abundance in copper ore mining waste and status as one of the most widespread sulfosalts on Earth. The research investigates the effects of co-doping and iso-valent doping on the TE properties of p-type tetrahedrite samples, specifically Cu10Mn2Sb4S11Se2 (Sample A) and Cu10MnZnSb₄S11Se2 (Sample B). These samples were synthesized using hot pressing at 773 K and compared with the existing pristine compound (Cu10Mn2Sb4S13). Doping with Mn and Zn (1:1) at the Cu site was found to optimize carrier concentration and enhance phonon scattering, leading to an improved power factor. Additionally, the Se substitution at the S site also introduced band degeneracy, further increasing the power factor. Further, sample B exhibited the highest Seebeck coefficient (∼300 μV/K) at 650 K, in comparison to Sample A (∼225 μV/K) and the pristine compound (∼250 μV/K). On the other hand, Sample A demonstrated significantly higher electrical conductivity (∼0.76 × 10⁴ S/m at 650 K), ∿ three times greater than that of the other prepared samples. Notably, the power factor of Sample A (∼0.389 mW/mK2 at 650 K) was more than twice that of Sample B (∼0.141 mW/mK2) and the pristine compound (∼0.160 mW/mK2). These findings suggest that dual-site substitution at the Cu and S positions presents a promising strategy to augment the TE performance of tetrahedrite compounds.