Abstract
A new RF method based on the accurate extraction of the intrinsic transconductance and gate–source channel capacitance from measured S-parameters is proposed to determine the intrinsic cutoff frequency of sub-0.1 µm MOSFETs. Using the RF technique, the intrinsic cutoff frequency enhancement with the linear dependence on 1/Lpoly2 is observed in sub-0.1 µm bulk n-MOSFETs. It is also observed that the reduction of extrinsic charging time is the most important to increase the measured cutoff frequency in sub-0.1 µm CMOS devices.
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