Abstract
Depth profiles of hydrogen in a ultrathin (2.1nm) SiO2 film grown on Si(001) have been measured using high-resolution elastic recoil detection (ERD) to investigate redistribution of hydrogen atoms by ion-beam irradiation in ERD itself. During irradiation of 400keV C+, steep decrease of hydrogen density at the surface and gradual increase of hydrogen density near the SiO2/Si interface was observed. A model that involves irradiation-induced desorption of hydrogen atoms from the surface and re-adsorption of residual gas molecules containing hydrogen atoms on the surface successfully explains the decrease of hydrogen density at the surface. The increasing hydrogen atoms near the SiO2/Si interface originate in the adsorbed hydrogen on the surface, suggesting that hydrogen atoms recoiled inward from the surface accumulate near the SiO2/Si interface. According to this “recoil” model, the recoil cross section for hydrogen by 400keV C+ is estimated to be 7×10−17cm2.
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