Abstract
A photovoltaic method has been used to measure the relative absorption in hexagonal Se of photons of energy 1.6 ev to 2.0 ev in the temperature range 80\ifmmode^\circ\else\textdegree\fi{}K to 440\ifmmode^\circ\else\textdegree\fi{}K. The measurements show that the transitions are indirect at the band edge, requiring the absorption or emission of a phonon. The energy gap is found to be (1.79\ifmmode\pm\else\textpm\fi{}0.01) ev at 300\ifmmode^\circ\else\textdegree\fi{}K; above this temperature $\frac{d{E}_{G}}{\mathrm{dT}}=\ensuremath{-}9\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}4}$ ev/degree. The absorption edge of hexagonal Se is compared with that of amorphous Se.
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