Abstract
A bright green photoluminescence of Er3+:YVO4 single crystal, excited by 407.6nm femtosecond laser, was investigated under pulsed magnetic field up to 47T. The integrated photoluminescence (PL) intensity is enhanced as magnetic field increases and reaches the maximum at around 4.5T, while further increasing of magnetic field up to 47T will suppress the PL intensity. And similar profile was observed in magnetic field dependent absorbance at excitation wavelength. These results are different from the reported literatures, detailed study here helps us to better understand the effect of magnetic field on Er doped materials and points out an efficient way to modulate the optical properties of luminescence materials which is important for the design and optimization of future devices.
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