Abstract
National Research Institute for Metals, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan~Received 9 December 1999!Based on purely geometrical considerations, we point out that a polar semiconductor surface with recon-struction does not satisfy the necessary condition for the existence of an Ehrlich-Schwoebel~ES! step-edgebarrier. We further show by the explicit Monte Carlo calculations that the kinetic surface roughening observedon a GaAs~001! surface can be accounted for by the stability and complexity of the (234) reconstruction, andhence an ES barrier is unnecessary to account for it. Finally, we point out that it is incorrect to use thesolid-on-solid~SOS! model with an ES barrier for surface growth studies or for atomistic growth simulations.I. INTRODUCTION
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