Abstract
p-type thermal conversion of high-purity undoped semi-insulating GaAs after annealing at 850 °C in H2 gas has been investigated. It has been found that the p-type carrier concentration at the surface layer quantitatively matches the residual carbon concentration in the bulk. The concentrations of the other acceptor impurities (Mn, Zn, Cu, Cr) in the sample are confirmed to be negligibly small. The depth profile of the carrier concentration indicates that the concentration of the EL2 level increases as the sixth power of the depth near the surface region and that it exhibits a linear dependence on depth in the deeper region. A possible mechanism for this abnormal behavior of the EL2 level is discussed.
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