Abstract
Dielectric measurements of water and methanol containing gold, graphite, silicon, silicon carbide, and silicon nitride powders were performed using the time domain reflectometry method. The relaxation process caused by orientation of the polar liquid molecules was observed in the frequency range of 100 MHz to 20 GHz, similar to the pure liquid. The relaxation strength shows an abnormal increase with volume fraction growth of the conductor or semiconductor, and it diverged at a certain fraction. The dependence on the concentration of Δεapp is experimentally given by Δεapp=δγΔεL/(φL−1+γ)+(1−δ)φLΔεL, where φL is the volume fraction of the liquid, ΔεL is the relaxation strength of the liquid, δ is the weighting parameter of the first term for the conductor property and the second term for the insulator property, and γ is a constant which expresses the degree of the shielding effect versus the applied electric field by the conductive particles. A divergence of Δεapp at φL=1−γ shown in the experimental results can be expected by this equation. This equation also expresses the properties of silicon carbide, which has a low conductivity, and also the insulator silicon nitride. These new findings in dielectric characteristics are applicable to a wide number of industrial purposes.
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