Abstract
We have performed systematical ab initio studies of the structural properties of ${\mathrm{Si}}_{x}{\mathrm{Ge}}_{1\ensuremath{-}x}$ alloy. To simulate the disordered alloy we use supercells where the Si and Ge atoms are randomly placed with the constraint that the pair correlation functions agree with their values for a perfect random alloy within a given tolerance. We obtain that the Si-Si, Si-Ge, and Ge-Ge bond lengths dependence with composition varies only slightly for the different kinds of bonds, with topological rigidity parameters between 0.6 and 0.7.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.