Abstract
The feasibility of preparing a thin film ZnO/CuInSe2 heterojunction solar cell using the spray pyrolysis technique is demonstrated. The electrical and optical properties of ZnO were varied by changing the substrate temperature. It was found that films deposited at a substrate temperature of about 400 °C showed suitable characteristics for their use as the window material of the heterojunction. Both ZnO and CuInSe2 were prepared by spray deposition. The junction obtained was rectifying and under the illumination characteristic of back-wall configuration (under 88mW cm-2) showed an open-circuit voltage of 0.3 V, a short-circuit current of 23 mA cm-2, a fill factor of 0.29 and an electrical conversion efficiency exceeding 2%. Thus we showed that a heterojunction ZnO/CuInSe2 solar cell can be fabricated with spray-deposited films but the quality of the films requires improvement for a high efficiency cell.
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