Abstract
We report the design, fabrication, and characterization of a porous silicon-based omnidirectional mirror for the near infrared range. The structure consists of 300 porous silicon chirped dielectric layers, optimized to have omnidirectional reflectivity response from 1000 to 2000 nm wavelength range. Measurements of reflectivity spectra are presented for non-polarized light at several incident angles (range 8°–65°) with a reflectivity >95% covering a 1μm band-width. Transfer matrix method calculations were carried out to show the complete angular range for both TM and TE polarizations including a simple model to illustrate the interface scattering effects.
Highlights
Metallic mirrors are widely employed in optical instrumentation to manipulate the flow of light; as the demand of the improve performance of devices is growing, there is an increasing need for dielectric mirrors with a high reflectivity
Estevez et al show an omnidirectional reflectance of 252 nm from 950 nm to 1456 nm, from an unbalanced mirror structure based on Gaussian sub-structures;7 Xifré-Perez et al obtained an omnidirectional photonic bandgap (OPBG) of 319 nm centered at 1460 μm by overlapping three unbalanced sub-structures;22 Bruyant et al reported an OPBG of 340 nm centered at 1270 nm with a chirped structure of 70 layers,6 being to the best of our knowledge, the largest OPBG reported by porous silicon multilayers for the near infrared (NIR) range
Gray bar illustrate the omnidirectional photonic bandgap for the measured angular range, with a reflectivity higher than 95%
Summary
Metallic mirrors are widely employed in optical instrumentation to manipulate the flow of light; as the demand of the improve performance of devices is growing, there is an increasing need for dielectric mirrors with a high reflectivity. Estevez et al show an omnidirectional reflectance of 252 nm from 950 nm to 1456 nm, from an unbalanced mirror structure based on Gaussian sub-structures; Xifré-Perez et al obtained an OPBG of 319 nm centered at 1460 μm by overlapping three unbalanced sub-structures; Bruyant et al reported an OPBG of 340 nm centered at 1270 nm with a chirped structure of 70 layers, being to the best of our knowledge, the largest OPBG reported by porous silicon multilayers for the near infrared (NIR) range. We optimize the chirping method to design, fabricate, and characterize a wide range omnidirectional structure by porous silicon dielectric multilayers, covering the near infrared range from 1 to 2 μm.
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