Abstract
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> This letter presents a V-band cavity oscillator based on a thin-film substrate with a flip-chip interconnection. A cavity serves as a parallel-feedback element, which is fabricated using a micromachining technique and is flip-chip mounted on a thin-film substrate with integrated passives. A GaAs pseudomorphic high electron-mobility transistor is flip-chip mounted on the thin-film substrate as an active device to generate negative resistance. The fabricated cavity with I/O ports in the same side has a loaded <emphasis emphasistype="italic">Q</emphasis> of 352, a coupling of 5.3 dB, and a resonant frequency of 59.88 GHz. The developed parallel-feedback cavity oscillator has an output power of about 9.7 dBm and a low phase noise of <formula formulatype="inline"><tex Notation="TeX">${-}112$</tex> </formula> dBc/Hz at 1 MHz offset with an oscillation frequency at 59.84 GHz. This work allows a low-cost mm-wave frequency source with high performances. </para>
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