Abstract
We have processed very small high electron mobility transistor (HEMT) on the two dimensional electron gas of a GaAs/GaInAs heterostructure. The contacts (down to 2 μm wide) connect channels of different lengths and widths. We measure the saturation I(V) curves and obtain the source drain voltage at saturation. Experiments demonstrate a universal linear dependence of the saturation voltage drop with the length of the channel, whatever its width. Our experimental result is understood with basic equations of the 2D channel, taking into account the contact resistivity. The universal law Usat(L) gives a nice way to measure easily and precisely the resistivity of contacts in ultrasmall devices when their width cannot be precisely known, like in narrow two dimensional electron gas.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.