Abstract
Interdigitated electrodes (IDEs) on dielectric films is an important electrode design in electrical components such as transducers and sensors. Further development and use of IDEs for characterization of the in-plane properties of dielectric films requires models for the capacitance, particularly when used in a multilayer stack. Previous models for the capacitance have permitted erroneous boundary conditions between layers with associated limitations to accuracy. In this work we present a new model based on fulfilling the boundary conditions between layers with different dielectric constant. We further demonstrate how the model can be used to calculate the in-plane dielectric constant and polarization of BaTiO3 films. The model is shown to outperform previous models using both the experimental data from BaTiO3 films on SrTiO3 substrates and finite element method simulations of the corresponding case. One important advantage compared to previous work is that the new model provides good results regardless of film thickness.
Highlights
Interdigitated electrodes (IDEs) are the most used electrodes for exploring the in-plane properties of dielectric thin films
In this work we present a new model based on fulfilling the boundary conditions between layers with different dielectric constant
The capacitances measured using geometrically different IDEs on the two films are shown in figure 4(a) and (b), where the capacitance has been normalized with respect to the number of gaps and the finger length
Summary
Interdigitated electrodes (IDEs) are the most used electrodes for exploring the in-plane properties of dielectric thin films. For devices that utilize the piezoelectric effect, such as surface acoustic wave devices [10,11,12] and piezoelectric transducers [13, 14], the dielectric properties must be understood in order to describe the electric field and coupling to the piezoelectric effect. A model describing the electric field is required to couple material properties to the capacitance of IDE devices. The electric field surrounding infinitely spanning IDEs sandwiched between two infinitely spanning materials was solved analytically by Engan [15], while several approaches have been used to estimate the capacitance of IDEs in combination with a thin film. Ponamgi [16] addressed the boundary condition between
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