Abstract
In this paper, we perform the first-principle calculations to explore the electronic and mechanical properties of two-dimensional SiGeO. SiGeO is an indirect band gap semiconductor with a gap of 1.29 eV and a high electron mobility of 1.70×103 cm 2V−1 s−1. The uniaxial strain can trigger the indirect-to-direct band gap transition. Moreover, SiGeO exhibits an extraordinary auxetic property, and its in-plane negative Poisson’s ratio is three times larger than that of borophenes. These properties would endow two-dimensional SiGeO with great potential in the application of electromechanical devices.
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