Abstract
An ensemble Monte Carlo simulation of hole transport in the emitters of ultrasmall npn bipolar transistors is presented in this paper. A small number of holes in a heavily doped emitter permit us to follow the entire history of all holes in the emitter over a long period of time. Most of the important scattering mechanisms and the band-to-band Auger recombination are included in the simulator. The minority-hole mobility was calculated and compared with the best existing measurement results. Reasonable agreement between the theory and experiments has been achieved. The fluctuation in the base current, which is a fundamental limitation in scaling bipolar transistors operating at very high speed, was extensively studied.
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