Abstract
Besides the application of the photonic crystal for the photodetector in the visible range, the infrared devices proposed with subwavelength structure are numerically and experimentally investigated thoroughly for infrared radiation sensing in this research. Several complementary metal oxide semiconductor (CMOS) compatible thermopiles with subwavelength structure (SWS) are proposed and simulated by the FDTD method. The proposed thermopiles are fabricated by the 0.35 μm 2P4M CMOS-MEMS process in TSMC (Taiwan Semiconductor Manufacturing Company). The measurement and simulation results show that the response of these devices with SWS is higher than for those without SWS. The trend of the measurement results is consistent with that of the simulation results. Obviously, the absorption efficiency of the CMOS compatible thermopile can be enhanced when the subwavelength structure exists.
Highlights
Based on the photonic crystal (PhC), it is proved to successful in the efficient photon coupling into photodetectors when the PhC structure is employed [1]
The results show that selective enhancement of the responsivity
The thermal sensor, the hole and circular required to truncate the computational domain without reflection
Summary
Based on the photonic crystal (PhC), it is proved to successful in the efficient photon coupling into photodetectors when the PhC structure is employed [1]. Thermopiles as the infrared sensor converting thermal energy into electrical energy can sense heat radiation and generate an output voltage proportional to a local temperature difference or temperature gradient [2]. Thermopiles working as infrared sensors can be used in many applications, such as remote temperature sensing [2,3,4,5]. Non-dispersive infrared sensing (NDIR) gas detection [6]. With the development of micro-electromechanical systems (MEMS) technology, the problem of mass production of thermopile. IR sensors has been effectively solved, and the manufacturing cost has been greatly reduced [3,4]. MEMS technology can be a goal of continuous integration, miniaturization, extended functionality, lowering cost, and improved performance and reliability. For the requirements of integration, the monolithic complementary-metal-oxide-semiconductor (CMOS) MEMS integration that integrates
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