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Abstract

A new process for a counter-doped region suitable for a 0.15 μm (gate length) buried channel (BC) pMOSFET is presented. At present serious short-channel effects of BC p-MOSFETs are recognized broadly as prohibitive for application at 0.1 μm. In order to realize 0.15 μm BC pMOSFETs, we propose a new process step, making use of a boron solid phase diffused channel (SPDC) from a Boron-doped silicate glass (BSG) to form an extremely shallow counter-doped region, which enables suppression of short-channel effects. Devices fabricated in this way exhibit good short-channel behavior at 0.15 μm gate length and, additionally, provide an excellent current driving-ability. Threshold voltage control is easy by optimizing the diffusion condition. We propose SPDC as a suitable process applicable to 0.2–0.1 μm BC p-MOSFET.