A television scan converter tube using a silicon diode array target

Abstract

A new type 7 scan converter tube is discussed which utilizes the silicon diode array target described in the preceding paper. The target in the camera tube integrates the hole diffusion current generated by an optical image. Since it is also possible to generate hole-electron pairs by energetic electron beam bombardment, video signals can be written onto the target by a second scanning beam incident from the side opposite the reading beam (the side the light is incident on in the camera tube). Current gain results from the fact that many hole-electron pairs may be created by a single energetic electron. The gain process is a form of electron bombardment induced conductivity (IEBIC) which appropriately may be called Secondary Hole Diffusion (SHD) in contrast to Secondary Electron Conduction (SEC). Memory may be built into the target by the use of appropriate traps for the holes. Thus a two-gun device of this sort may be used for scan conversion, scan compression and repeat, random access memories as well as provide a tool for the study of physical processes in silicon. Such devices have been constructed and tested and experimental results will be presented.