Abstract
A new lateral power metal-oxide-semiconductor field-effect transistor (MOSFET) with dual conduction paths and high- ${k}$ passivation is proposed. The high- ${k}$ passivation enables the dual conduction paths to realize the double reduced surface field (RESURF) action and facilitates the formation of an accumulation layer during forward conduction. The proposed device offers a 42% reduction in specific on-resistance ( ${R}_{{ON},{SP}}{)}$ when compared to a similar size baseline device with the same breakdown voltage (BV). The technology computer-aided design (TCAD) simulation results, based on a $0.5~\mu \text{m}$ bipolar-CMOS-DMOS (BCD) compatible process, show that the proposed device is able to provide a ${R}_{{ON},{SP}}$ as low as 0.28 $\text{m}\Omega \cdot $ cm2 with a BV of 92 V.
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