Abstract
A 6–18 GHz broadband low-noise amplifier (LNA) based on 0.15-um GaAs pHEMT process is introduced. The three-stage amplifier is composed of three common source transistors in cascade. The front stage amplifier mainly realizes the minimum noise matching, while the middle stage amplifier adjusts the flatness of gain and the rear stage amplifier realizes the power gain matching. By using RLC-feedback and current reuse techniques, the matching performance is improved and power consumption is greatly reduced. The measured results show that across from 6 to 18 GHz, the gain of the amplifier is higher than 25dB while the gain fluctuation is less than 0.8 dB, the input and output return loss is less than -13dB, the typical noise figure in band is 1.4dB, and the output power at 1dB compression point is greater than 10dBm. The LNA occupies an area of <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$2.1 \times 1.35$</tex> mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and only consumes 27mA from a 5-V supply.
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