Abstract
Non-uniformities in the plasma parameters in a magnetized inductively coupled plasma (M-ICP) etcher were investigated. Further in text of this article the silicon dioxide and the photoresist are called as abbreviations the oxide and the PR accordingly. The etch results of an oxide and PR were correlated with the non-uniformity characteristics of the plasma parameters. The plasma density non-uniformities and the oxide etch-rate non-uniformities in M-ICP-V (9.28 and 2.4%, respectively) were lower than those in M-ICP-A (14.6% and 21.4%, respectively) or ICP (13.03 and 5.2%, respectively). The profile angle of the etched silicon dioxide in ICP, M-ICP-A, and M-ICP-V configurations were also measured and the angle in M-ICP-V was approximately 85° and similar in ICP.
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