Abstract
Mn-doped ZnO films (for Mn at% ∼4%) were implanted using 30 keV H + ions with a dose of 6.9×10 16 cm –2 and subsequently annealed at 300 °C to study the effect of magnetism on the interstitial hydrogen in n-type II–VI magnetic semiconductors by using secondary ion mass spectroscopy (SIMS), Hall measurement and SQUID. We observed that the interstitial hydrogen leads to the changes in the magnetic hysteresis loop as well as the enhancement of carrier concentrations in the Mn-doped ZnO film.
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