Abstract
In this paper, the chemical mechanical polishing (CMP) performances of tungsten (W) and titanium (Ti) films according to the oxidizer content were studied through an electrochemical corrosion analysis. In order to investigate the electrochemical polishing behavior of the W and the Ti films, we used an alumina (Al2O3)-based tungsten slurry with a H2O2 oxidizer for CMP test. As an experimental result, for the case of 5 vol% added oxidizer, the removal rates were improved, and a good polishing selectivity of 1.4 : 1 was obtained, which means that the oxidizer with the highest removal rate has a high dissolution rate due to the predominant electrochemical corrosion effects. Therefore, we conclude that the CMP characteristics of W and Ti strongly depend on the amounts of H2O2 oxidizer added.
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