Abstract
Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which was achieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition of dysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films were investigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films were characterized using field emission scanning electron microscopy, transmission electron microscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when the annealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C, the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phases were observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showed no MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy films with 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ~2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.
Highlights
One of the fundamental passive components is the thin film resistor, which is applied primarily in electronic circuits
Copper allows for low electrical resistivity and manganese produces thermal stability in this Cu–Mn alloy system [4]
Cu–Mn–Dy thin films with a thickness of 80 nm were prepared on substrates using a direct current (DC) and radio frequency (RF) magnetron co-sputtering system
Summary
One of the fundamental passive components is the thin film resistor, which is applied primarily in electronic circuits. Thin film resistors have exceptional properties, such as a low temperature coefficient of resistance, high precision, high stability and low noise, and are commonly used in precision electronic equipment [1,2,3]. Copper–manganese alloy films with high thermal stability and low resistance are usually used in mobile electronic devices. Copper allows for low electrical resistivity and manganese produces thermal stability in this Cu–Mn alloy system [4]. A characteristic feature of Mn in Cu is its larger activity coefficient compared to other elements that have limited solubility, such as Al and Mg [6].
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