Abstract
The reliability of polysilicon thin-film transistors (poly-Si TFTs) employing the dual-layered gate insulator was investigated. We suggested the use of the double gate insulator, which is composed of silicon oxide and silicon nitride , to overcome the lower gate-oxide reliability and high leakage-current problems caused by the thin gate insulator of poly-Si TFTs. The breakdown field increased to and the leakage current decreased by up to 1 order of magnitude compared with that of TFT using the single gate insulator. Experimental results showed that the reliability of poly-Si TFTs employing the gate insulator was greatly improved by the reduced charge trapping and the relatively larger thermal conductivity of the film.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
