Abstract
Samples with low-energy C60 ions implanted into porous silicon were fabricated with the ionized cluster beam deposition approach for improving the light emission of C60. Depth analysis by secondary-ion mass spectroscopy showed that C60 had been incorporated into porous silicon. The photoluminescence spectrum measured under excitation by an Ar+ laser (514.4 nm) at room temperature showed a large number of intense and well resolved fine-structure peaks. These features indicated the strong coupling of vibrational progressions with the electron states of C60, induced by the interaction between the C60 molecule and the nanometre-sized silicon particles.
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