Abstract
Interlayer dielectric film formation under Al wirings for VLSI and ULSI devices requires low temperature processing and high surface planarization capability. Polymers as a dielectric material play a significant role in achieving the current state-of-the art in microelectronics.In this work, the dielectric properties of a new polyimide material suitable for microelectronics applications have been investigated. The polyimide was synthesized following the synthesis of 4,4′-bis(3-aminophenoxy)diphenyl sulfone (DAPDS), by nucleophilic aromatic substitution of 4,4′-dichlorodiphenyl sulfone with m-aminophenol, DAPDS/pyromellitic dianhydride (PMDA). Using this specific polyimide, a metal–polyimide–silicon (MIS) structure was manufactured to demonstrate the dielectric properties of the material. The properties of the MIS capacitance have been examined by deriving an electrical model of the MIS structure.
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