Abstract
Thin-film sandwich structures of Cu-SiO/B2O3-Cu with dielectric thicknesses of the order of 2000 A were prepared by vacuum evaporation, and circulating and emission currents were measured as functions of the applied voltage. A thermal-voltage memory effect was recorded and the relaxation of the high-impedance memory state was studied. The results are interpreted in terms of the filamentary growth theory.
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