Abstract
AbstractThe reduction in the dimensions of advanced semiconductor devices has brought about the need for new metallization materials with low resistivity and high electromigration resistance. The Cu3Ge, has been suggested as a contact and metallization material due to its low resistivity (6 μΩ-cm), high electromigration resistance, and high chemical stability. We have grown thin films of Cu3Ge on (100) Si by the sequential e-beam deposition of an amorphous Ge layer then a Cu layer, followed by a thermal anneal to crystallize the Cu3Ge film. The Cu-Ge films maintain their low resistivity (10-15 μΩ cm) over a range of anneal temperatures, up to an anneal temperature of 600°C, where a significant increase in resistivity is observed. We have shown that this increase in resistivity is directly related to the structure of the Cu3Ge film and interface. We have observed by cross-sectional transmission electron microscopy (TEM), that films of Cu3Ge form a smooth, atomically sharp interface with (100) Si, up to an anneal temperature of 600°C, where the film agglomerates, and additional compounds are observed. In this paper, we discuss the correlation between microstructure, interface structure and electrical properties of these novel thin film structures.
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