Abstract
The profile of SiGe plays a dominant role in determining inverse narrow width effect of sub-28 nm PMOS. In this paper, different SiGe profiles, which are illustrated in multiple parameters, are achieved by altering the SiGe etch process and deposition processes in 28 nm HKMG technology. Then the relationship between the inverse narrow width effect and SiGe processes are obtained. It is found that the drive current becomes higher when the sigma-shaped SiGe structure is smaller or the raised SiGe height is larger. Furthermore, the inverse narrow width effect is closely related to the SiGe profile.
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