A Study of Solution-Processed Zinc–Tin-Oxide Semiconductors for Thin-Film Transistors

Abstract

Thin-film transistors (TFTs) fabricated using solution-processed zinc–tin-oxide (ZTO) semiconductor thin films as the channel layers are proposed in this paper. Effect of the ZTO annealing temperature on the TFT performance is studied. Significant reduction of oxygen-vacancy and chlorine residue contents in the ZTO semiconductor can be obtained when the annealing temperatures are 500 °C–700 °C. The ZTO semiconductor with the annealing process at 600 °C in air can give an optimal ZTO TFT having a low leakage current of 10−12 A and a high ${I}_{ \mathrm{\scriptscriptstyle ON}}/{I}_{ \mathrm{\scriptscriptstyle OFF}}$ ratio of 3 $\times \,\,10^{7}$ . The subthreshold swing is 0.39 V/decade corresponding to an interface trap density of $1.2\times \,\,10^{12}\,\,$ cm−2eV−1.