Abstract
This paper proposes an investigation of 1200V rated transistors with the twofold purpose of assessing their performance and robustness under representative operational conditions and of extracting guidelines for the design of reliable multi-chip power electronics modules based on SiC technology. It includes a thorough analysis of the devices steady-state and switching characteristics, as well as the investigation of short-circuit events. Taking into account operational conditions of real applications, this study considers the dependence on ambient temperature, bias conditions and driver circuit parameters.
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