Abstract
We report on S-doping of ZnSb for S concentrations ranging from 0.02at% to 2.5at%. There are no previous reports on S-doping. ZnSb is a thermoelectric material with some advantages for the temperature range 400K–600K. The solid solubility of S in ZnSb was estimated to be lower than 0.1% from observations of precipitates by scanning microscopy. Hall and Seebeck measurements were performed as a function of temperature from 6K to 623K. The temperature dependence of the electrical properties suggests that S introduces neutral scattering centers for holes in the p-type material. An increase in hole concentration by S is argued by defect reactions involving Zn vacancies.
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