Abstract
The radiation damage and annealing behavior of 〈100〉 Si implanted at room temperature by As + 2 and As + at equivalent energies are compared. It is found that the radiation damage created by As + 2 implantation is greater than that created by As + implantation. Shallow doped layers in silicon have been formed by As + 2 implantation with low energies from 10 to 30 keV and doses from 5 × 10 13 to 5 × 10 15/cm 2. Rapid thermal annealing is used to control the redistribution of implanted dopant. The results indicate that abrupt n + -p junctions are shallow as 700–1500 Å can be obtained by using As + 2 implantation in combination with rapid thermal annealing.
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