Abstract
The ion damage is responsible for the progressive reduction of the collection efficiency of a semiconductor device in Ion Beam Induced Charge (IBIC) measurements. This effect was studied by irradiating a silicon n +-p diode with a 1.85 MeV He + microbeam at very low fluences ≤5 × 10 9ions/cm 2 and measuring the decrease of charge pulse height vs ion fluence. The experimental results can be described by a model, which represents the region of maximum damage as an interface with given carrier recombination velocity v s. The model assumes that the ion fluence affects v s, but not the bulk minority carrier diffusion length. The comparison between experiment and theory yields an approximately linear relationship between ion fluence and v s; this yields a value of about 7 for the average number of recombination centers produced by a single He + ion.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
