Abstract
A MOSFET using a stress concentration (SC) structure to enhance the channel stress in strained MOSFETs is proposed. The nMOSFETs with gate length varying from 15 to 350 nm are simulated to investigate the effects of SC. For devices strained by tensile contact etching stop layer, over 12% driving current improvement better than that of conventional strained devices has been achieved. The method for introducing SC is effective for both short-and long-channel device.
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